FDMC86160 N-Channel Power Trench® MOSFET is a 100V, 43A, 14mΩ MOSFET. This MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
This document is a technical datasheet for the Fairchild Semiconductor FDMC86160, an N-Channel Power Trench MOSFET. The device features low on-state resistance (RDS(on)) and is designed for applications requiring high performance in small spaces, such as High Performance VRM, POL, and orring functions.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters like capacitance and switching times, and drain-source diode specifications. It also includes typical characteristic graphs illustrating transfer characteristics, normalized resistance versus temperature, and safe operating areas.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) at Ta = 25°C | 43 A |
| Power Dissipation (Ta = 25°C) | 54 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
It is well suited for Bridge Topologies, Synchronous Rectifier, and orring functions.
Yes, the termination is Lead-free and ROHS Compliant.