This document is the specification sheet of NTMD6N02R2/D power MOSFET, which mainly introduces the product features and characteristics, including ultra low RDS(on), higher efficiency, logic level gate drive, miniature dual SO-8 surface mount package, high speed, soft recovery diode, avalanche energy specified, SO-8 mounting information.
The NTMD6N02R2 is a dual N-Channel Enhancement Mode Power MOSFET offered by ON Semiconductor in a miniature dual SO-8 surface mount package. It is designed for applications requiring high efficiency and low on-resistance, such as DC-DC converters, low voltage motor control, and power management in portable and battery-powered products like computers, printers, and cellular telephones.
The device features an ultra-low Rds(on) and a diode with high speed and soft recovery characteristics. The datasheet provides maximum ratings, electrical characteristics, switching characteristics, and typical electrical characteristics including graphs for on-resistance, capacitance, and safe operating areas.
| Package Type | Dual SO-8 |
|---|