Infineon BSA 223SP OptiMOS P-Channel Transistor Preliminary Data Sheet

The BSA 223SP is a P-channel enhancement mode Super Logic Level MOSFET with 150°C operating temperature, 2.5V rated, Avalanche rated, dv/dt rated.


Infineon BSA 223SP OptiMOS P-Channel Transistor Preliminary Data Sheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
94 KB
Published
03 August, 2012
Updated
30 September, 2023
MD5 checksum
34075C440419FAD24E7D96827C2EC3BB

About this manual

This document is a preliminary datasheet for the Infineon BSA 223SP, an OptiMOS P-channel enhancement-mode small-signal transistor. It features Super Logic Level operation with a 2.5 V rating and is avalanche rated.

The datasheet provides comprehensive technical specifications including maximum ratings, thermal characteristics, electrical parameters such as drain-source breakdown voltage and on-state resistance, and dynamic characteristics like gate charge and capacitance.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics - Static
  • Electrical Characteristics - Dynamic
  • Gate Charge Characteristics
  • Reverse Diode Characteristics
  • Typical Output Characteristic

Specifications

On-State Resistance (RDS(on))1.2 Ω typ.
Continuous Drain Current (ID)-0.39 A
Operating Temperature Range-55... +150 °C
Package TypeSC-75

Frequently asked questions

What is the gate threshold voltage?

The typical gate threshold voltage (VGS(th)) ranges from -0.9 V to -1.2 V at a junction temperature of 25 °C.

Is this transistor avalanche rated?

Yes, the BSA 223SP is explicitly listed as an avalanche-rated device.

What is the maximum power dissipation?

The total power dissipation (Ptot) at an ambient temperature of 25 °C is 0.25 W.

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