SMBD7000/MMBD7000 is a silicon switching diode array for high-speed switching applications. It has a reverse voltage of 100V, peak reverse voltage of 100V, and forward current of 200mA.
This document is a datasheet for the Infineon SMBD7000/MMBD7000 Silicon Switching Diode Array, intended for high-speed switching applications. The device is available in the SOT23 series package and features a maximum reverse voltage of 100V and a forward current of 200mA.
Key electrical characteristics include a breakdown voltage of 100V, a reverse recovery time of 4ns, and a diode capacitance of 2pF. The datasheet provides detailed tables for DC and AC characteristics, permissible pulse loads, and thermal resistance specifications.
| Package Configuration | SOT23 series |
|---|---|
| Diode reverse voltage | 100 V |
| Peak reverse voltage | 100 V |
| Forward current | 200 mA |
| Total power dissipation | 330 mW |
| Junction temperature | 150 °C |
| Reverse recovery time | 4 ns |
| Diode capacitance | 2 pF |
The maximum reverse voltage rating is 100 V.
The maximum forward current is 200 mA.