The BFS540 is a NPN 9 GHz wideband transistor from Philips. It features high power gain, low noise figure and high transition frequency. It is suitable for applications such as satellite TV systems and RF portable communication equipment.
The Philips BFS540 is an NPN transistor designed for RF wideband amplifier applications, such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. It features high power gain, low noise figure, and a high transition frequency, housed in a plastic SOT323 envelope with gold metallization for reliability.
The document details the device's electrical characteristics, including DC current gain, transition frequency, and noise figure at various frequencies (900 MHz and 2 GHz). It also provides limiting values, thermal resistance data, and graphical representations of gain, noise figure, and stability circles.
| Collector-base voltage (Vcbo) | 20 V |
|---|---|
| Collector-emitter voltage (Vceo) | 15 V |
| DC collector current (Ic) | 120 mA |
| Package type | SOT323 |
It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.
The maximum collector-base voltage is 20 V.