BFS25A NPN 5 GHz wideband transistor is a low power, low noise SOT323 package NPN transistor, designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz.
The document is a technical specification sheet for the Philips BFS25A, an NPN transistor packaged in a plastic SOT323 envelope. It is specifically designed for use in RF amplifiers and oscillators found in pagers and pocket phones with signal frequencies up to 5 GHz.
Key features highlighted include low current consumption, excellent reliability ensured by gold metallization, and a transition frequency ($f_T$) of up to 5 GHz at 1 mA collector current. The datasheet details electrical characteristics such as DC current gain, noise figure, and maximum unilateral power gain across various frequencies.
| Transition frequency (fT) | 5 GHz typical at 1 mA, VCE=1V |
|---|---|
| DC current gain (hFE) | 80 typical at 0.5 mA, VCE=1V |
| Noise figure (F) | 1.8 dB typical at 1 GHz |
| Maximum unilateral power gain (Gum) | 13 dB typical at 1 GHz |
| Collector-base voltage (VCBO) | 8 V |
| Total power dissipation (Ptot) | 32 mW up to Tg=170°C |
No, Philips states these products are not designed for use in life support appliances or systems.
The maximum total power dissipation is 32 mW when the temperature is up to 170 °C.
The maximum collector-emitter voltage is 5 V when the base is open.
The maximum DC collector current is 6.5 mA.