This application note describes a method of using ICP-MS to measure surface metal contamination on silicon wafers by combining VPD with ICP-MS.
The document details a technique combining Vapor Phase Decomposition (VPD) and Inductively Coupled Plasma Mass Spectrometry (ICP-MS) for characterizing trace metal contaminants on silicon wafers. This method allows for sample preparation and analysis in less than 30 minutes, enabling real-time monitoring of wafer production.
| Analysis Time | less than 30 minutes |
|---|---|
| Detection Limits | part per trillion and sub part per trillion |
| RF Power | 930 Watts |
| Carrier Gas Flow | 1.0 L/min |
| Blend Gas Flow | 0.55 L/min |
The technique allows for the accurate analysis of up to 40 elements in a single droplet.
Wafer sample preparation and analysis can be performed in less than 20 minutes.
The sample was self-aspirated at an uptake rate of 100 pL/min.
This analysis allows for the accurate analysis of up to 40 elements in a single droplet.