This document describes a new generation of high cell density planar MOSFETs from Zetex, which combines the benefits of low on-resistance with fast switching speed. They are ideal for high efficiency, low voltage power management applications.
The document describes the ZXM64N035G, a high cell density planar MOSFET designed for high efficiency power management applications. Key features include low on-resistance, fast switching speed, low threshold voltage, and compatibility with SOT223 packages.
The datasheet provides absolute maximum ratings, electrical characteristics such as breakdown voltage and capacitance values, thermal resistance data, and package dimensions. It specifies operating conditions for various drain currents and temperatures.
| Drain-Source Voltage | 35 V |
|---|---|
| Power Dissipation (Ta=25°C, SOT223) | 2.0 W |
| Operating Temperature Range | -55 to +150 °C |
| Static Drain-Source On-State Resistance (Vgs=10V) | 0.050 Ohm |
The power dissipation limit is 3.9 W for this specific mounting and measurement setup.
The device can operate and be stored between -55°C and +150°C.