This document provides detailed specifications and characteristics for the ZXM64N02X N-channel enhancement mode MOSFET. It is designed for high efficiency, low voltage power management applications such as DC-DC converters, power management functions, disconnect switches, and motor control. The device features a low on-resistance of 0.040Ω and a drain-source breakdown voltage of 20V.
| Drain-Source Breakdown Voltage | 20 V |
|---|---|
| Static Drain-Source On-State Resistance | 0.040Ω |
| Junction to Ambient Thermal Resistance | 113 °C/W |
| Operating Temperature Range | -55 to +150 °C |
It is ideal for DC-DC converters, power management functions, disconnect switches, and motor control.
The device uses a low profile SOIC package.