International IOR Rectifier IRF2903Z IRF2903ZS IRF2903ZL handbook

This document introduces the features and characteristics of IRF2903Z IRF2903ZS IRF2903ZL, including advanced process technology, ultra-low on-resistance, 175°C maximum operating temperature, fast switching speed and improved repetitive avalanche rating.

Brand: International Rectifier
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 12
File format: PDF
File size: 412 KB
Published: 15 June, 2012
Updated: 30 September, 2023
MD5 checksum: FBC6D56F6237EDA93CE618582CE7C858
PDF: International IOR Rectifier IRF2903Z IRF2903ZS IRF2903ZL handbook PDF

About this manual

The document is a technical datasheet for the International Rectifier IRF2903Z/S/L HEXFET Power MOSFET. It is specifically designed for automotive applications and features a 30V breakdown voltage, ultra-low on-resistance, and a 175°C operating junction temperature. The device is available in TO-220AB and TO-262 packages.

What's inside

Features
Description
Absolute Maximum Ratings
Electrical Characteristics
Source-Drain Ratings
Typical Output Characteristics
Maximum Safe Operating Area
Package Outline
Part Marking Information

Specifications

Power Dissipation	290 W
Gate-to-Source Voltage	+20 V

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at a junction temperature of 25°C?

The maximum continuous drain current is 75 A when the junction temperature is 25°C.

What is the maximum operating junction temperature for this device?

The device can operate at a maximum junction temperature of 175°C.

What is the maximum single pulse avalanche energy for this MOSFET?

The maximum single pulse avalanche energy is 820 mJ.

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