This document describes the features and characteristics of the P-HEMT CFH800 product produced by Infineon Technologies, including low noise figure and high associated gain, suitable for high IP3 receiver stages up to 4GHz. It is suitable for PCS CDMA and UMTS applications. The product has a low-cost miniature package with SOT343 package.
This document is a preliminary datasheet for the Infineon CFH800, a GaAs HEMT transistor designed for high IP3 receiver stages up to 4GHz. It is suitable for PCS CDMA and UMTS applications, offering low noise figures and high associated gain. The device is housed in a low-cost miniature SOT343 package with tape and reel packaging available.
| Drain-source voltage | 5.5 V |
|---|---|
| Drain current | 160 mA |
| Channel temperature | 150 °C |
| Package type | SOT343 |
| Noise figure (typical) | 0.50 dB |
| Associated gain (typical) | 17 dB |
| Operating frequency range | up to 4GHz |
The device uses a low cost miniature SOT343 package.
Yes, tape and reel packaging is available for this component.
The maximum channel temperature is 150 °C.