This product is a low noise GaAs HEMT with high associated gain, low cost plastic package, for low noise front end amplifiers up to 20GHz and DBS down converters, fully RF tested at 12GHz
This document is a preliminary datasheet for the CFH120, a low cost plastic packaged GaAs HEMT. The device features low noise characteristics and high associated gain suitable for low noise front end applications operating up to 20 GHz.
The component is specifically optimized for DBS down converters and has been fully RF tested at 12 GHz. It includes three variants (CFH120-06, CFH120-08, and CFH120-10) with different noise figure and gain specifications.
| Drain-source voltage (Vos) | 3.0 Vv |
|---|---|
| Operating temperature range | -30 ... +85 °C |
| Total power dissipation (Ts < 51°C) | 180 mW |
| Noise figure @ f=12 GHz (CFH120-06) | 0.50 - 0.60 dB |
| Associated gain @ f=12 GHz (CFH120-06) | 11.5 - 12.5 dB |
The maximum rated drain-source voltage is 3.0 V.
These devices are designed for low noise front end amplifiers up to 20 GHz.
The maximum total power dissipation is 180 mW under those conditions.