Cypress Semiconductor CY7C1354BV25/CY7C1356BV25 Pipelined SRAM Datasheet

This document describes the features and characteristics of the 256K x 36/512K x 18 Pipelined SRAM with NoBL™ Architecture CY7C1354BV25 and CY7C1356BV25, produced by Cypress Semiconductor Corporation.


Cypress Semiconductor CY7C1354BV25/CY7C1356BV25 Pipelined SRAM Datasheet - cover page
Brand
Cypress
Category
Memory
Document type
Datasheet
Language
English
Pages
28
File format
PDF
File size
828 KB
Published
12 June, 2012
Updated
28 September, 2023
MD5 checksum
3853A03E8832BE5518ADF3D8A3367CE6

About this manual

The CY7C1354BV25 and CY7C1356BV25 are synchronous pipelined burst SRAMs designed to support unlimited true back-to-back Read/Write operations with no wait states. They feature advanced (NoBL) logic that allows data to be transferred on every clock cycle, dramatically improving system throughput for applications requiring frequent Write/Read transitions.

These devices operate at a single 2.5V power supply and are available in speed grades of 225, 200, and 166 MHz. They support burst capabilities in both linear and interleaved orders and include features such as byte write capability, synchronous self-timed writes, and IEEE 1149.1 JTAG Boundary Scan.

What's inside

  • Features
  • Functional Description
  • Selection Guide
  • Pin Configurations
  • Pin Definitions

Specifications

Operating Voltage2.5V
Maximum Access Time (225 MHz)2.8 ns

Frequently asked questions

What is the architecture of these SRAMs?

They utilize NoBL (No Bus Latency) logic to support unlimited true back-to-back Read/Write operations with no wait states.

Are these devices pin-compatible?

Yes, they are pin compatible and functionally equivalent to ZBT devices.

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