This document is a technical datasheet for the TOSHIBA 2SK2750, an enhancement-mode silicon n-channel MOS type field effect transistor. It is designed for high speed, high current switching applications such as chopper regulators, DC-DC converters, and motor drives.
The datasheet provides comprehensive electrical characteristics including maximum ratings for voltage and current, thermal resistance values, and specific parameters like gate threshold voltage and on-resistance. It also includes graphical representations of the safe operating area (SOA), transient thermal impedance, and avalanche energy capabilities.
| Drain-Source Voltage (Vdss) | 600 V |
|---|---|
| Gate-Source Voltage (Vgss) | +30 V |
| DC Drain Current (Id) | 3.5 A |
| Drain Power Dissipation (Pd) | 85 W |
| Channel Temperature (Tch) | 150 °C |
| Gate Threshold Voltage (Vth) | 2.0 ~ 4.0 V |