This document provides technical specifications for the TOSHIBA 16DL2CZ47A and 16FL2CZ47A High Efficiency Diode (HED) Silicon Epitaxial Type devices. It lists maximum ratings such as repetitive peak reverse voltage and average output rectified current, alongside electrical characteristics including forward voltage and recovery times.
| Repetitive Peak Reverse Voltage (16FL2CZ47A) | 100 V |
|---|---|
| Average Output Rectified Current (Full Sine Waveform) | 16 A |
| Peak One Cycle Surge Forward Current (50Hz) | 80 A |
| Junction Temperature Range | -40~150 °C |
| Storage Temperature Range | -40~150 °C |
| Screw Torque | 0.6 Nm |
The maximum average output rectified current is 16 A for a full sine waveform.
The junction temperature range is from -40 to 150 °C.