This document is a technical datasheet for the Toshiba 2SD2130 silicon NPN epitaxial type transistor. It specifies applications including micro motor drive, hammer drive, switching, and power amplifier circuits.
The text provides maximum ratings such as collector-base voltage of 60V and collector current of 4A. It also includes detailed electrical characteristics like DC current gain (hFE) up to 2000 minimum, transition frequency, and switching times.
| Collector Current (Pulse) | 4 A |
|---|---|
| DC Current Gain (hFE) Min. | 2000 |
| Collector Power Dissipation (Ta=25°C) | 1.5 W |
| Junction Temperature (Tj) | 150 °C |
The maximum collector power dissipation is 1.5 W when the temperature is 25°C.
The minimum DC current gain is 2000 when VCE is 2V and IC is 1A.