This document is a technical datasheet for the Toshiba 2SD2414(SM), an NPN silicon triple diffused type transistor designed for high current switching and power amplifier applications. It provides comprehensive specifications including maximum voltage and current ratings, junction temperature limits, and storage temperature ranges.
The datasheet details electrical characteristics such as collector cut-off current, DC current gain (hFE), saturation voltages, transition frequency, and output capacitance under specific test conditions. Additionally, it includes graphical data for safe operating areas, common emitter curves, and switching times to assist in circuit design.
| Collector-Base Voltage (VcBO) | 100 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 80 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (Ig) | 7 A |
| Base Current (Ip) | 1 A |
| Collector Power Dissipation (Ta = 25°C) | 15 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55~150 °C |
The maximum collector current (Ig) is rated at 7 A.
The maximum junction temperature (Tj) is 150 °C.