This document is a technical datasheet for the Toshiba 2SD1410A, an industrial-grade silicon NPN triple diffused type transistor. It provides specifications suitable for igniter applications and high voltage switching.
The datasheet outlines maximum ratings such as a collector-base voltage of 300V and a collector current of 6A. It also includes detailed electrical characteristics like DC current gain, saturation voltages, and switching times under specific test conditions.
| Collector-Base Voltage (VcBO) | 300 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 250 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (Ic) | 6 A |
| Base Current (Ip) | 1 A |
| Collector Power Dissipation | 2.0 W |
| Junction Temperature (Tj) | 150 °C |
The minimum DC current gain is 2000.