This document provides technical data for an NPN high power silicon transistor, including maximum ratings, thermal characteristics, and electrical characteristics.
This document is a technical datasheet for the Microsemi 2N7368, an NPN high power silicon transistor qualified per MIL-PRF-19500/622. It covers devices in JAN, JANTX, and JANTXV qualification levels.
| Collector-Emitter Voltage | 80 Vdc |
|---|---|
| Collector-Base Voltage | 80 Vdc |
| Emitter-Base Voltage | 7.0 Vdc |
| Collector Current | 10 Ade |
| Total Power Dissipation @ Ta = 25°C | 115 Ww |
| Operating & Storage Junction Temperature Range | -65 to +200 °C |