Microsemi LAWRENCE 2N7370 handbook

Update: 30 September, 2023

The 2N7370 JAN series is a high power silicon transistor with a maximum collector-emitter voltage of 100Vdc, a maximum collector-emitter breakdown voltage of 100Vdc, a maximum emitter-base voltage of 5.0Vdc, a maximum base current of 0.2Adc, a maximum collector current of 12Adc, and a maximum total power dissipation of 100W. The operating temperature range is -65 to +175℃.

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MD5 Checksum: 4553A25613CB6B66EBF0C4A0F66C48D5

Publication date: 12 July, 2012

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PDF Link: Microsemi LAWRENCE 2N7370 handbook PDF