The 2N7370 JAN series is a high power silicon transistor with a maximum collector-emitter voltage of 100Vdc, a maximum collector-emitter breakdown voltage of 100Vdc, a maximum emitter-base voltage of 5.0Vdc, a maximum base current of 0.2Adc, a maximum collector current of 12Adc, and a maximum total power dissipation of 100W. The operating temperature range is -65 to +175℃.
This document is a technical datasheet for the Microsemi 2N7370, an NPN Darlington high power silicon transistor. The device is qualified per MIL-PRF-19500/624 and is available in JAN, JANTX, and JANTXV series levels. It is packaged in a TO-254 case.
The datasheet provides comprehensive electrical specifications including maximum ratings for voltage and current, thermal characteristics, and detailed electrical characteristics for both OFF and ON states. It also lists dynamic characteristics, switching times, and a Safe Operating Area (SOA) for DC tests.
| Collector-Emitter Voltage | 100 Vdc |
|---|---|
| Collector-Base Voltage | 100 Vdc |
| Emitter-Base Voltage | 5.0 Vdc |
| Collector Current | 12 Adc |
| Total Power Dissipation | 100 Ww |
| Operating Junction Temperature Range | -65 to +175 °c |
| Thermal Resistance, Junction-to-Case | 15 °crw |
| Package Type | TO-254 |
The maximum collector current (Ic) is 12 Adc.
The total power dissipation is 100 Ww at a case temperature of +25°C.
Yes, the device is qualified per MIL-PRF-19500/624.