This document describes a PNP high power silicon transistor, qualified per MIL-PRF-19500/621 standard. It has a collector-emitter voltage of 80V, a collector-base voltage of 80V, an emitter-base voltage of 7.0V, a base current of 4.0A, a collector current of 10A, and a maximum power dissipation of 115W.
This document provides technical specifications for the Microsemi 2N7369, a PNP high power silicon transistor qualified per MIL-PRF-19500/621. It includes maximum ratings such as collector-emitter voltage of 80V and total power dissipation of 115W at a case temperature of 425°C.
The datasheet details electrical characteristics including off-state currents, on-state saturation voltages, dynamic parameters like output capacitance, and safe operating area limits for DC tests.
| Collector-Emitter Voltage | 80 Vdc |
|---|---|
| Total Power Dissipation | 115 Ww |
| Operating Junction Temperature Range | -65 to +200 °C |
| Thermal Resistance, Junction-to-Case | 15 °crw |
The maximum collector current rating is 10 A.
The total power dissipation is 115 W when the case temperature is 425°C.
The collector-emitter breakdown voltage is a minimum of 80 V.