This document describes the features and characteristics of the ASI SD1006 high frequency transistor, which is suitable for general purpose amplifier applications.
The ASI SD1006 is an NPN silicon high frequency transistor designed for general purpose amplifier applications. It is packaged in a TO-39 style package and is manufactured by Advanced Semiconductor, Inc.
The document provides comprehensive technical data including maximum ratings for voltage, current, and power, as well as electrical characteristics such as breakdown voltages, current gain, and noise figures across various frequencies.
| Package Style | TO-39 |
|---|---|
| Collector Current (Ic) | 400 mA |
| Collector-Emitter Voltage (Vceo) | 30 V |
| Collector-Base Voltage (Vcbo) | 50 V |
| Power Dissipation (Po) | 3.5 W @Tc= 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Typical Noise Figure (NFns) | 2.7 dB |
| Typical Noise Figure (NFes) | 7.0 dB |
The maximum collector current is 400 mA.
The maximum power dissipation is 3.5 W at a case temperature of 25°C.