This document is a technical datasheet for the Toshiba TIM6472-35SL, a microwave power Gallium Arsenide Field Effect Transistor (GaAs FET). The device operates in the 6.4 to 7.2 GHz frequency range and features low intermodulation distortion with high efficiency.
Key specifications include an output power of 45.0 dBm at the 1 dB compression point, a typical power gain of 8.0 dB, and a maximum drain current of 9.0 A under specified conditions. The datasheet provides detailed tables for RF performance, electrical characteristics, absolute maximum ratings, and graphical data regarding output power versus frequency and input power.
| Frequency Range | 6.4 to 7.2 GHz |
|---|---|
| Output Power (P1dB) | 45.0 dBm |
| Power Gain at 1 dB Compression Point | 8.0 dB |
| Drain Current (Typical) | 9.0 A |
| 3rd Order Intermodulation Distortion (IM3) | -45 dBc |
| Drain-Source Voltage (Maximum) | 15 V |
| Channel Temperature (Maximum) | 175 C |
The typical power gain at the 1 dB compression point is 8.0 dB.
The absolute maximum rating for drain current (Ids) is 26 A.
Yes, the device comes in a hermetically sealed package.