This document is a single-page datasheet for the Toshiba HN3C09F, which is described as a Silicon NPN Epitaxial Planar Type transistor designed as a Low Noise Amplifier (LNA) for VHF and UHF band applications. The device is packaged in an SM6 Super Mini type with 6 leads.
The datasheet provides maximum ratings such as collector-emitter voltage of 12V and collector power dissipation of 300mW, along with electrical characteristics including DC current gain (hFE) ranging from 80 to 240 and a transition frequency (fT) up to 7 GHz. It also lists pin assignments for the dual transistor structure.
| Transistor Type | Silicon NPN Epitaxial Planar Type |
|---|---|
| Band Application | VHF~UHF Band |
| Collector-Base Voltage (VcBO) | 20 V |
| Collector-Emitter Voltage (VCEO) | 12 V |
| Emitter-Base Voltage (VEBO) | 3 V |
| Collector Current (Ic) | 30 mA |
| Collector Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 125 C |
The device includes two devices in an SM6 Super Mini Type with 6 leads.
The maximum Collector-Emitter Voltage (VCEO) is rated at 12 V.