This document describes the maximum ratings and characteristics of the product with model APT6013JVR, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, and gate-source leakage current.
This document is a datasheet for the APT6013JVR, a high voltage N-Channel enhancement mode Power MOSFET manufactured by Advanced Power Technology. The device utilizes Power MOS V® technology to minimize the JFET effect and reduce on-resistance while achieving faster switching speeds.
| Drain-Source Voltage | 600 Volts |
|---|---|
| Continuous Drain Current | 40 Amps |
| Pulsed Drain Current | 160 Amps |
| Total Power Dissipation | 500 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.130 Ohms |
| Package Type | SOT-227 |
The device supports a continuous drain current of 40 Amps when the temperature is 25°C.
The maximum torque specified for device mounting screws and electrical terminations is 13 lbs-in.
The isolation withstands an RMS voltage of 2500 Volts applied for one minute.