This document provides technical specifications for the TOSHIBA 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, and 4N33(Short) series of photocouplers. These devices consist of a gallium arsenide infrared emitting diode coupled with a silicon photo darlington in a dual in-line package.
| Collector-Emitter Voltage | 30 V |
|---|---|
| Isolation Resistance | 10^9 Ohm (Typ.) |
| Isolation Voltage | 2500 Vrms (Min.) |
| Switching Time | 100us (Max.) |
The maximum switching time is 100 microseconds.
The minimum isolation voltage is 2500 Vrms for one minute.