Toshiba MP4711 Power MOS FET Module Datasheet


Toshiba MP4711 Power MOS FET Module Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
323 KB
Published
11 June, 2012
Updated
11 June, 2012
MD5 checksum
A527CCBACE04DA0808031CE94CA0CC77

About this manual

The Toshiba MP4711 is a Power MOS FET module designed for high-power, high-speed switching applications. It utilizes Toshiba's L2-z-MOS technology and consists of four silicon N-channel MOS devices in a single package with a heat sink. The module is isolated to the lead (SIP 12 Pin) and is suitable for industrial applications such as printer head pin drivers, pulse motor drivers, and solenoid drivers.

What's inside

  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Source-Drain Diode Ratings
  • Flyback-Diode Ratings
  • Marking
  • Safe Operating Area
  • Thermal Resistance Curves

Specifications

Drain-Source Voltage100 V
Drain Current Pulse20 A
Drain Power Dissipation (4 Devices)36 W
Drain-Source ON Resistance0.17 Ω (typ.)
Channel Temperature150 °C
Package TypeSIP 12 Pin

Frequently asked questions

What are the applications for the MP4711?

It is designed for high-power, high-speed switching applications such as printer head pin drivers, pulse motor drivers, and solenoid drivers.

What is the maximum channel temperature?

The maximum channel temperature is 150 °C.

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