This document is a technical datasheet for the Toshiba 2SC5262, which is described as a Silicon NPN Epitaxial Planar Type transistor designed specifically for use as a VHF-UHF Band Low Noise Amplifier. The device features low noise performance with a typical figure of 1.7dB at 2GHz and high gain characteristics.
| Collector-Base Voltage (VCBO) | 15 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 7 V |
| Emitter-Base Voltage (VEBO) | 15 V |
| Collector Current (Ic) | 15 mA |
| Base Current (Ip) | 7 mA |
| Collector Power Dissipation (Pc) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Transition Frequency (fT) | 9 to 12 GHz |
| Insertion Gain | 8 to 11 dB |
| Noise Figure (NF) | 1.3 to 1.7 dB |
The maximum rated collector power dissipation is 150 mW when the ambient temperature is 25°C.