This is a specification sheet for KFG1G16Q2M-DEB5, which includes the product overview, revision history, ordering information, description, operation information, electrical specifications and timing waveforms, application information and technical information, and package dimensions.
This document is a datasheet for the Samsung OneNAND™ Flash Memory product family, specifically detailing the 1Gb (KFG1G16Q2M-DEB5), 2Gb, and 4Gb variants. The device integrates a NAND Flash array with a NOR Flash interface, including on-chip error correction, boot RAM, and data RAM buffers to reduce external system logic.
| Supply Voltage | 1.8V (1.7V ~ 1.95V) |
|---|---|
| Internal BufferRAM | 1KB BootRAM, 4KB DataRAM |
| Page Size | (2K+64)B |
| Block Size | (128K+4K)B |
| Maximum Clock Frequency | 54MHz |
| Asynchronous Random Read Access Time | 76ns |
| Endurance | 100K Program/Erase Cycles |
| Data Retention | 10 Years |
| Package Type | 63ball FBGA |
The device supports a maximum clock frequency of 54MHz for synchronous read operations.
This flash memory is rated for an endurance of 100K Program/Erase Cycles.
The package measures 10mm x 13mm with a maximum height of 1.0mm.