Samsung K4C89183AF Network-DRAM Datasheet

This document is about K4C89183AF-ACF5 specification, introduces the product features and characteristics, including product technical parameters, performance indicators and so on.


Samsung K4C89183AF Network-DRAM Datasheet - cover page
Brand
Samsung
Category
Memory
Document type
Datasheet
Language
English
Pages
55
File format
PDF
File size
1.4 MB
Published
11 June, 2012
Updated
01 October, 2023
MD5 checksum
B3E2B72387868112A5CF042FBCEA6BB8

About this manual

The K4C89183AF is a CMOS Double Data Rate (DDR) Network-DRAM containing 301,989,888 memory cells. It is organized as 4,194,304 words x 4 banks x 18 bits and features fully synchronous operation referenced to the clock edge.

What's inside

  • Description
  • Features
  • Pin Assignment
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • AC Timing Parameters
  • Package Outline

Specifications

Organization4,194,304 words x 4 banks x 18 bits
Memory Density288Mb
Power Supply Voltage (VDD)2.375V to 2.625V
I/O Buffer Voltage (VDDQ)1.7V to 1.9V
Package Type60 Ball FBGA

Frequently asked questions

How many memory banks does the K4C89183AF contain?

The device is organized as four independent banks for data access.

What are the power supply voltage requirements for the core and I/O buffers?

The VDD core requires 2.5V while the VDDQ buffer operates between 1.7V and 1.9V.

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