The document describes the KSR2214, a PNP epitaxial silicon transistor designed for switching applications such as inverters, interface circuits, and driver circuits. It features a built-in bias resistor (Rb = 4.7kΩ) and serves as a complement to the KSA1214 model.
| Collector-Base Voltage (Vceo) | +50 V |
|---|---|
| Collector-Emitter Voltage (Veoo) | -50 V |
| Emitter-Base Voltage (Vero) | ~10 V |
| Collector Current (Io) | -100 mA |
| Collector Dissipation (Po) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55~160 °C |
| Collector-Base Breakdown Voltage (BVca0) | -60 V |
| DC Current Gain (hfe) | 68 |
It is suitable for switching circuits, inverters, interface circuits, and driver circuits.
Yes, it has a built-in bias resistor with values Rb=4.7kΩ and A=47kΩ.
Yes, it is the complement to the KSA1214.