This document introduces the specifications of three Samsung OneNAND flash memory products (1GB, 2GB and 4GB)
This document is a specification sheet for the Samsung OneNAND Flash memory product family, covering densities of 1Gb, 2Gb, and 4Gb. It details the device architecture, which integrates a NAND Flash array with a NOR Flash interface, internal buffers, and error correction capabilities. The document outlines various product features such as multiple reset modes, multi-block erase, and low power dissipation options for Single, DDP, and QDP configurations.
| Page Size | (2K+64)B |
|---|---|
| Block Size | (128K+4K)B |
| Maximum Clock Frequency | 66MHz |
| Asynchronous Random Read Access Time | 76ns |
| Endurance | 100K Program/Erase Cycles |
| Data Retention | 10 Years |
| Package Type | 63ball FBGA |
The Extended temperature range is -30°C to 85°C.
Yes, the device includes Internal 2bit EDC / 1bit ECC.