The document is a technical specification sheet for the Samsung MMBA812M6, a PNP epitaxial silicon transistor. It lists the device as a general-purpose component housed in an SOT-23 package.
Key specifications include absolute maximum ratings such as a collector-base voltage of 50V and a collector current of 100mA. Electrical characteristics detail parameters like cutoff currents, DC current gain ranging from 200 to 400, and saturation voltages under specific test conditions.
| Package Type | SOT-23 |
|---|---|
| Collector-Base Voltage (Vces) | 50 V |
| Collector-Emitter Voltage (VeO) | 40 V |
| Emitter-Base Voltage (Vee) | 5 V |
| Collector Current (Ic) | 100 mA |
| Collector Dissipation (Po) | 350 mW |
| Storage Temperature (Tstg) | -65 to +150 °C |
| DC Current Gain (hFE) Min | 200 |
| DC Current Gain (hFE) Max | 400 |
The absolute maximum rating for the Collector-Base Voltage (Vces) is 50 V.
Under test conditions of Vee=6V and Ic=1mA, the DC Current Gain (hFE) ranges from a minimum of 200 to a maximum of 400.
The device is packaged in an SOT-23 format.