Samsung K6R1004V1D CMOS SRAM Datasheet

This document is about the specification of the 64Kx16 bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges


Samsung K6R1004V1D CMOS SRAM Datasheet - cover page
Brand
Samsung
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
184 KB
Published
07 June, 2012
Updated
30 September, 2023
Model
R100
MD5 checksum
D4218E09B4922CCAD9C777A560FE91B1

About this manual

The K6R1004V1D is a 1,048,576-bit static RAM organized as 262,144 words by 4 bits, designed for high-speed circuit applications. It operates with a single 3.3V power supply and features TTL-compatible inputs and outputs. The device is packaged in a 32-pin SOJ and supports both commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges. It includes three-state outputs and no clock or refresh requirement.

What's inside

  • Features
  • General Description
  • Pin Configuration
  • Functional Block Diagram
  • Absolute Maximum Ratings
  • Recommended DC Operating Conditions
  • DC and Operating Characteristics
  • Capacitance
  • AC Characteristics
  • Timing Diagrams

Specifications

Memory Size64K x 16 Bit
Access Time8ns to 10ns
Temperature RangeCommercial: 0°C to 70°C, Industrial: -40°C to 85°C
Package Type32-pin SOJ
Power Supply3.3V
Standby Current20mA (Max.)
Operating Current80mA (Max.) for 8ns, 65mA (Max.) for 10ns

Frequently asked questions

What is the access time for the K6R1004V1D?

The access time is 8ns to 10ns maximum.

What temperature ranges does the K6R1004V1D support?

It supports both commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges.

What is the package type of the K6R1004V1D?

It is packaged in a 32-pin SOJ.

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