KM68V1000B, KM68U1000B Family CMOS SRAM is a low power low voltage CMOS static RAM produced by Samsung Semiconductor. It has three-state output and TTL compatibility, and supports various package types to meet user flexibility in system design.
This datasheet details the KM68V1000B and KM68U1000B families of 128K x8 bit CMOS static RAM, fabricated using Samsung’s advanced CMOS process. The devices support low data retention voltage and various package types for system design flexibility. Key specifications include operating voltage ranges (3.0–3.6V for KM68V1000B, 2.7–3.3V for KM68U1000B), power dissipation, and timing parameters for read and write cycles. The datasheet also lists product variants for commercial, extended, and industrial temperature ranges.
| Power Supply Voltage | KM68V1000B family: 3.0~3.6V; KM68U1000B family: 2.7~3.3V |
|---|---|
| Low Data Retention Voltage | 2V (Min) |
| Package Type | 32-SOP, 32-TSOP1-0820F/R |
| Operating Temperature Range | Commercial: 0~70°C; Extended: -25~85°C; Industrial: -40~85°C |
| Standby Current (TTL) | 0.3 mA |
| Read Cycle Time | 70ns to 100ns |
| Write Cycle Time | 70ns to 100ns |
| Data Retention Voltage | 2.0V to 3.6V |
The KM68V1000B family operates between 3.0V and 3.6V.
The low data retention voltage is 2V minimum.
Available package types include 32-SOP and 32-TSOP1-0820F/R.
The read cycle time ranges from 70ns to 100ns.