This document is a technical datasheet for the Mitsubishi Electric M68779M, a Silicon MOS FET Power Amplifier designed for FM portable applications in the 218 to 250 MHz frequency range. The device provides an output power of up to 7.0 W with a drain bias supply voltage of 7.2 V.
| Frequency Range | 218 to 250 MHz |
|---|---|
| Gate Bias Voltage | 4 V max |
The circuit requires a gate bias supply of 3.5 V.