U630H16 is a fast static RAM (25, 35, 45 ns) with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin.
The ZMD U630H16 is a 2K x 8 bit nvSRAM device that integrates a fast static RAM with an electrically erasable PROM (EEPROM). It operates in two modes determined by the NE pin: SRAM mode for standard read/write operations and nonvolatile mode for transferring data between SRAM and EEPROM. The device supports unlimited recall cycles from EEPROM to restore data after power loss.
| Memory Capacity | 2048 x 8 bits |
|---|---|
| Access Times | 25, 35 and 45 ns |
| Output Enable Access Times | 12, 20 and 25 ns |
| STORE Cycle Time | < 10 ms |
| RECALL Cycle Time | < 20 ps |
| Data Retention in EEPROM | 100 years |
| Packages | SOP28, PDIP28 |
The operating mode is determined by the state of the NE pin, which selects between SRAM mode and nonvolatile mode.
Yes, an automatic RECALL occurs on Power Up when the voltage exceeds a specific threshold, and unlimited recall cycles are supported.
The device provides 100 years of data retention in the EEPROM element.