U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin.
The U630H16 is a high‑performance CMOS non‑volatile static RAM offering 2048 × 8 bits of memory with fast access times of 25 ns, 35 ns, and 45 ns. It features an integrated EEPROM for non‑volatile storage, automatic STORE and RECALL cycles, and operates from a single 5 V supply.
The document provides pin configurations, electrical characteristics, timing parameters, and recommended operating conditions. It also includes power consumption data, absolute maximum ratings, and warranty and life‑support policy information.
| Memory Size | 2048 × 8 bits |
|---|---|
| Power Supply Voltage | 4.5 V – 5.5 V |
| Operating Temperature (C‑Type) | 0 °C – 70 °C |
| Storage Temperature | -65 °C – 150 °C |
| Power Dissipation | 1 W |
| STORE Cycle Time | ≤ 10 ms |
The U630H16 provides 2048 × 8 bits of static RAM.
The device operates from 4.5 V to 5.5 V.
It operates from 0 °C to 70 °C (C‑Type) and can be stored from –65 °C to 150 °C.