This document describes the features and characteristics of Silicon Storage Technology's products, including device organization, single voltage read and write operations, superior reliability, low power consumption, sector-erase and block-erase capabilities, fast read access time, latched address and data, fast erase and word-program, automatic write timing, end-of-write detection, CMOS I/O compatibility, JEDEC standard, and available packages.
This document is a technical data sheet for the SST39LF200A/400A/800A and SST39VF200A/400A/800A series of Multi-Purpose Flash (MPF) memory devices. Manufactured using Silicon Storage Technology's proprietary SuperFlash technology, these chips are organized as 128K x16, 256K x16, or 512K x16.
| Organization | 128K x 16 / 256K x 16 / 512K x 16 |
|---|---|
| Voltage Range (LF Series) | 3.0-3.6V |
| Voltage Range (VF Series) | 2.7-3.6V |
| Endurance | 100,000 Cycles (typical) |
| Data Retention | Greater than 100 years |
| Active Current | 20 mA (typical) |
| Sector-Erase Time | 18 ms (typical) |
The devices provide a typical Word-Program time of 14 usec.
They are offered in both 48-lead TSOP and 48-ball TFBGA packages.
It is initiated by executing a six-byte command sequence with Chip-Erase command (10H) at address 5555H.