This data sheet introduces the features and characteristics of SST39LF512/010/020/040 and SST39VF512/010/020/040, including organization, voltage range, reliability, power consumption, sector erase capability, read access time, latched address and data, fast erase and byte program, automatic write timing, internal VPP generation, end-of-write detection, CMOS I/O compatibility, and JEDEC standard-Flash EEPROM pin
This datasheet describes the SST39LF and SST39VF series of CMOS Multi-Purpose Flash (MPF) manufactured with Silicon Storage Technology's proprietary SuperFlash technology. The devices are organized as 64K, 128K, 256K, or 512K x8 and offer single voltage read and write operations ranging from 3.0-3.6V for LF series to 2.7-3.6V for VF series.
The devices have a typical endurance of 100,000 cycles.
The typical Chip-Erase time is 70 ms.
The maximum Byte-Program time is 20 usec.