This document describes the features and characteristics of SST's MPF + SRAM ComboMemory products. The products have single 2.7-3.3V read and write operations, concurrent operation, superior reliability, low power consumption, flexible erase capability, fast read access times, flash automatic erase and program timing, CMOS I/O compatibility, etc.
The SST32HF802/162/164 ComboMemory devices integrate a 512K x16 or 1M x16 CMOS flash memory bank with a 128K x16 or 256K x16 CMOS SRAM memory bank in a MultiChip Package (MCP), manufactured with SST's proprietary SuperFlash technology. These devices feature high performance Word-Program and allow concurrent operation, enabling reads from or writes to the SRAM while erasing or programming the Flash.
| Endurance | 100,000 Cycles (typical) |
|---|---|
| Data Retention | Greater than 100 years |
| Active Current (Flash/SRAM Read) | 15 mA (typical) |
| Standby Current | 20 uA (typical) |
| Flash Read Access Time | 70 ns and 90 ns |
| SRAM Read Access Time | 70 ns and 90 ns |
The SST32HF802 has a 512K x16 Flash memory bank.
Both the SST32HF162 and SST32HF164 have a 1M x16 Flash memory bank.
Yes, you can read from or write to the SRAM while erasing or programming the Flash.