The CENTRAL SEMICONDUCTOR BAS56 is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications.
The document describes the Central Semiconductor BAS56, an ultra-high speed silicon switching diode manufactured using the epitaxial planar process. It is housed in a surface mount epoxy molded package featuring isolated dual diodes designed for high current and high speed switching applications.
Maximum ratings are specified at 25°C ambient temperature, including a continuous reverse voltage of 60V and a peak repetitive forward current of 600mA. The datasheet provides detailed electrical characteristics such as forward voltage drop, junction capacitance, and switching times (trr), along with mechanical dimensions for the SOT-143 case.
| Peak Repetitive Forward Current | 600mA |
|---|---|
| Forward Surge Current (tp=1ms) | 4000A |
| Operating and Storage Temperature | -65 to +150°C |
The BAS56 is an ultra-high speed silicon switching diode manufactured with isolated dual diodes.
The device supports a maximum continuous reverse voltage of 60 V and a continuous forward current of 200 mA.
The junction operates within a temperature range from -65 to +150 degrees Celsius.