This datasheet provides the characteristics parameters of Central Semiconductor CJD122 and CJD127, including maximum ratings, nominal values, test conditions, test results, etc.
This document describes the Central Semiconductor CJD122 and CJD127 types, which are complementary silicon power Darlington transistors manufactured in a surface mount DPAK package. They are designed for low speed switching and amplifier applications.
The datasheet provides maximum ratings, electrical characteristics, and mechanical outline dimensions for the devices. Key specifications include a collector-emitter voltage of 100V, a continuous collector current of 8.0A, and a power dissipation of 20W at a junction temperature of 25°C.
| Collector-Base Voltage | 100 V |
|---|---|
| Collector-Emitter Voltage | 100 V |
| Emitter-Base Voltage | 5.0 V |
| Continuous Collector Current | 8.0 A |
| Peak Collector Current | 16 A |
| Power Dissipation | 20 W |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance Junction-to-Case | 6.25 °C/W |
The devices are manufactured in a surface mount DPAK package.
They are designed for low speed switching and amplifier applications.
The maximum continuous collector current is 8.0 A.