This document is a datasheet for the Central Semiconductor CEN-U45, an NPN Silicon Monolithic Darlington Transistor. It is designed for applications requiring high gain and high power dissipation. The device utilizes a JEDEC TO-202 case package.
The datasheet provides maximum ratings at 25°C ambient temperature, including collector-emitter voltage of 40V and a power dissipation of 10W at the case temperature of 25°C. It also lists electrical characteristics such as leakage currents, breakdown voltages, saturation voltages, current gain (hFE), transition frequency (fT), and capacitance values.
| Package Type | JEDEC TO-202 Case |
|---|---|
| Collector Current (Io) | 2.0 A |
| Power Dissipation (Tc=25°C) | 10 W |
| Collector-Emitter Voltage (Vces) | 40 V |
| Current Gain (hFE) Min @ Ic=1.0A, Vce=5.0V | 4.0K |
| Transition Frequency (fT) @ Ic=200mA, f=100MHz | 100 MHz |
It is a NPN Silicon Monolithic Darlington Transistor.
The maximum collector current is 2.0 A.
It can dissipate up to 10 W when the case temperature is 25°C.