This document is a technical datasheet for the Sanyo 2SJ277, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and availability in a surface mount type package to reduce manufacturing processes.
The datasheet provides comprehensive electrical specifications including breakdown voltages, leakage currents, capacitance values, and switching times. It also includes absolute maximum ratings such as drain-to-source voltage of -100V and drain current up to 60A for pulses.
| Drain to Source Voltage (Vpss) | -100 V |
|---|---|
| Gate to Source Voltage (Vess) | +15 V |
| Drain Current (DC) (Ip) | -15 A |
| Drain Current (Pulse) (Ipp) | -60 A |
| Allowable Power Dissipation (Pp) | 1.65 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Input Capacitance (Cies) | 1900 pF |
The device has an allowable power dissipation of 1.65 W when the case temperature is 25°C.
The part can be stored at temperatures ranging from -55 to +150 °C.
The device supports a pulse drain current of 60 A with a duty cycle of less than 1%.