This document provides technical specifications for the Samsung SSH25N40 and SSH25N35 N-channel power MOSFETs. The devices feature a rugged polysilicon gate cell structure, improved inductive ruggedness, and fast switching times. They are packaged in TO-3P cases with pins designated as Gate, Drain, and Source.
| Package Type | TO-3P |
|---|---|
| Drain-Source Voltage (SSH25N40) | 400 Vdc |
| Drain-Source Voltage (SSH25N35) | 350 Vdc |
| Continuous Drain Current (Tc=25°C) | 26 Adc |
| Total Power Dissipation (Tc=25°C) | 280 Watts |
| Operating Temperature Range | -55 to +150 °C |
The device can dissipate up to 280 Watts under these conditions.