The document describes the features of the CENTRAL SEMICONDUCTOR CMST5088 and CMST5089 types, which are NPN silicon transistors with high gain and low noise characteristics.
The document describes the CENTRAL SEMICONDUCTOR CMST5088 and CMST5089 types as NPN silicon transistors manufactured by the epitaxial planar process. These devices are epoxy molded in a SUPERmini surface mount package, specifically designed for applications requiring high gain and low noise.
The datasheet details maximum ratings such as collector-base voltage (35V/30V) and power dissipation (250mW), along with electrical characteristics including current gain (hFE) and cutoff frequencies. It also includes a mechanical outline showing the lead code for the SOT-323 case.
| Collector-Base Voltage (VCBO) | 35 V (CMST5088), 30 V (CMST5089) |
|---|---|
| Collector-Emitter Voltage (VCEO) | 30 V (CMST5088), 25 V (CMST5089) |
| Emitter-Base Voltage (VEBO) | 4.5 V |
| Collector Current (IC) | 50 mA |
| Power Dissipation (PD) | 250 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
The marking code for CMST5088 is 1QC, and for CMST5089 it is 1RC.
They are epoxy molded in a SUPERmini surface mount package (SOT-323 case).