The document introduces the fifth generation HEXFETs product from International Rectifier, which features logic-level gate drive, ultra-low on-resistance, and fast switching speed, making it suitable for a wide variety of applications. The product is available in surface mount and through-hole mounting packages, with power dissipation levels up to 1.5 watts in typical surface mount applications. The document also provides the parameters and performance indicators of the product.
The document details the specifications of the IRLR/U2705 HEXFET Power MOSFET, which features logic-level gate drive and ultra-low on-resistance. It is available in two package configurations: the D-Pak (IRLR2705) for surface mounting using vapor phase or infrared techniques, and the straight lead version (IRLU2705) for through-hole TO-251AA mounting.
The device is available as Surface Mount (IRLR2705) in D-Pak and Straight Lead (IRLU2705) in TO-251AA.
Yes, the IRLR/U2705 is described as a Logic-Level Gate Drive Ultra Low On-Resistance MOSFET.