The IRLML6402 is a P-channel MOSFET from International Rectifier with a rated maximum voltage of -20V, a rated maximum current of -3.7A and a rated maximum power of 1.3W. This MOSFET is packaged in SOT-23 and has extremely low on-resistance, low power consumption and is suitable for applications such as battery and load management.
The document describes the IRLML6402 as an ultra-low on-resistance P-Channel MOSFET designed for battery and load management applications. It features a ruggedized HEXFET design with a specialized Micro3™ SOT-23 footprint that offers a low profile of less than 1.1mm, making it suitable for space-constrained environments like portable electronics.
| Drain-Source Voltage (VDS) | -20 V |
|---|---|
| Power Dissipation (Pd) | 1.3 W |
| On-Resistance (RDS(on)) | 0.050 Ohms |
At an ambient temperature of 70°C, the maximum power dissipation is 0.8 W.
The typical static drain-to-source on-resistance is 0.050 ohms at -4.5V gate voltage.