IXFK/IXFN series is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET from IXYS. This product has international standard packages, UL 94 V-0 flammability classification, SOT-227B miniBLOC aluminum nitride insulation, low RDS(on) HDMOSTM process, Unclamped Inductive Switching (UIS) rated, Fast intrinsic rectifier and other features. It can be applied to DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.
This document is a technical datasheet for the IXYS HiPerFETTM Power MOSFETs, specifically the IXFK/IXFN 44N50 and 48N50 models. These are N-channel enhancement mode devices designed with avalanche rating, high dv/dt capability, and low turn-off time (trr).
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) @ 48N50 | 48 A |
| Operating Junction Temperature (TJ) | -55 to +150 °C |
| Package Type | TO-264 AA / miniBLOC SOT-227 B |
They are suitable for DC-DC converters, synchronous rectification, battery chargers, and switched-mode power supplies.
The maximum continuous drain current at a case temperature of 25°C is 44 A.
The mounting torque should be between 0.9 and 6 Nm, or 13 to 1 lb.in.